Chinese scientists unveil world's fastest chip developed without silicon
What's the story
In a groundbreaking development, Chinese researchers have unveiled a new chip technology that beats all existing performance benchmarks.
The team, led by Peking University Professor Peng Hailin, has developed a self-engineered 2D transistor.
The innovative device operates 40% faster than Intel and TSMC's cutting-edge three-nanometer silicon chips while consuming 10% less energy.
"It is the fastest, most efficient transistor ever," an official statement on the university website stated.
Paradigm shift
Transistor technology: A shift in semiconductor race
Professor Hailin compared their breakthrough to "changing lanes" in the semiconductor race, emphasizing its importance in overcoming silicon-based challenges.
He said, "If chip innovations based on existing materials are considered a 'short cut,' then our development of 2D material-based transistors is akin to 'changing lanes.'"
He also noted that while this path is born out of necessity due to current US sanctions, it also forces researchers to find solutions from fresh perspectives.
Improvements
Propritary materials helped boost computing power, reduce energy use
Using their proprietary bismuth-based materials—a high-performance semiconductor (Bi2O2Se) and a high-dielectric oxide gate (Bi2SeO5)—researchers achieved thin, leak-free gate structures.
This design significantly reduced switching voltage, boosted computing power, and minimized energy use and leakage due to the materials' high insulation.
The breakthrough chip culminates years of research and development by Peng and his team, who discovered the Bi2O2Se/Bi2SeO5 material system nearly 10 years ago.
The researchers expect performance to further exceed silicon devices as they scale production and refine manufacturing.
Performance comparison
Bismuth-based transistor outperforms leading competitors
The team's transistor has outperformed the most advanced comparable devices from Intel, TSMC, Samsung, and the Belgian Interuniversity Microelectronics Centre.
Notably, all the comparisons were made under the same operating conditions to ensure a fair assessment of performance.
This further highlights the potential of their innovative 2D material-based transistors in revolutionizing chip technology.